Substitute的問題，透過圖書和論文來找解法和答案更準確安心。 我們找到下列問答集和資訊懶人包

Introduction to Game Design, Prototyping, and Development

為了解決Substitute的問題，作者Gibson Bond, Jeremy 這樣論述：

Learn All the Design & Development Skills You Need to Make Great Games with Unity, the World’s Most Popular Professional Game EngineIf you want to design and develop games, there is no substitute for strong, hands-on experience with modern techniques and tools. That is exactly what this book

provides. Leading instructor and indie game developer Jeremy Gibson Bond covers all three disciplines that you need to succeed: game design theory, rapid iterative prototyping, and practical programming.Building on two previous best-sellers, this Third Edition contains hundreds of improvements acros

s more than 400 new pages, all designed to make it even easier to understand and more useful in modern game development.The five game tutorials have been thoroughly revised and expanded to cover even more best practices for prototyping and development, and all examples now use Unity 2020.3 LTS (Long

Term Support), a stable and feature-rich standard for years to come. The new content includes greatly enhanced tutorials, a chapter on Unity’s high-performance Data-Oriented Tech Stack (DOTS), new Coding Challenges to help you transition to making your own games from scratch, and tips on next steps

after you have finished the book. The revamped website includes playable versions of all example games, plus an exciting new tool that provides immediate feedback on potential errors in your own code.Part I: Game Design and Paper PrototypingUse the Layered Tetrad to understand and design powerful i

nteractive experiences.Explore the core game design practices of paper prototyping, testing, and iteration.Learn effective strategies for staying on track and on schedule.Get tips for finding a rewarding job in today’s industry.Part II: Programming C# in UnityLearn C# from the basics through class i

nheritance, object-oriented programming, and data-oriented design.Part III: Game Prototype TutorialsImplement games across five genres: arcade, casual physics, space shooter, solitaire card game, and top-down adventure game. Each game is designed to be easily extensible into your own projects.Take t

hree games from prototype to ＂first playable＂ through new extended tutorial chapters that refi ne the games further than in previous editions of the book.NEW! Part IV: Next StepsTackle the new, growing library of Coding Challenges, a proven method for transitioning from tutorials to creating your ow

n projects from scratch.Get ideas and resources for new projects to tackle on your own.

Substitute進入發燒排行的影片

以第一原理量子傳輸理論研究在介面處有取代硫處理之二硫化鎢電晶體

為了解決Substitute的問題，作者陳竑任 這樣論述：

矽基互補式金氧半場效電晶體的持續微縮遭遇短通道效應的限制，此限制從過去到未來的發展導致了一連串的問題。包含汲極引發位障降低(Drain-induced Barrier Lowering, DIBL)、閘極引發漏電(Gate-induced Drain Leakage, GIDL)、擊穿(Punch-Through)、載子遷移率下降等等。在各種可能使電晶體微縮至1nm節點以下的新穎通道材料中，具原子尺度的二維材料不僅直觀上可克服短通道效應，使電晶體更進一步微縮，同時仍保持高載子遷移率。單原子層WS2為一種最常被研究的過渡金屬二硫族化合物(TMD)材料，實驗上已被作為電晶體的通道材料來使用，並展

示出高電流開關比、高載子遷移率及高熱穩定性。發展WS2電晶體最迫切的挑戰在於降低接觸電阻，在本論文中，我們施以第一原理量子傳輸計算來研究Metal/WS2與Metal/WSX/WS2側接觸，試圖以硫族元素之取代來降低蕭特基位障，因此減少接觸電阻。在此該取代使用了五族或七族元素取代單層WS2一側部分區域之硫族元素，產生超材料WSX (X= P, As, F, Cl, Br)的部分。另外，我們進一步比較該取代在界面金屬化與界面鍵結以及其在蕭特基位障的效果。如此之WSX緩衝接觸展示了p型Pt/WSP/WS2側接觸和n型Ti/WSCl/WS2側接觸的接觸電阻分別低至122.4Ω∙μm與97.9Ω∙μm

。此外，我們也利用第一原理分子動力學觀測到室溫下穩定的單層WSX。

A History of Delusions: The Glass King, a Substitute Husband and a Walking Corpse

為了解決Substitute的問題，作者Shepherd, Victoria 這樣論述：

Victoria Shepherd conceived and produced the ten-part series A History of Delusions for BBC Radio 4. She has produced scores of documentaries and major strands for BBC Radio 4; she is also a writer, with an M.A. in creative writing from the University of East Anglia.

具新穎氮硫化鎢界面結構的p型二硫化鎢電晶體: 以第一原理量子傳輸理論進行模擬計算

為了解決Substitute的問題，作者歐仲鎧 這樣論述：

實驗室所製作的過渡金屬二硫族化合物(含一定濃度缺陷)二維電晶體，由於費米能釘札導致其p型接觸非常稀少；另一方面，電腦計算模擬所對應的上述理想結構(二維材料無缺陷)則可在高功函數金屬顯出為p型接觸，但仍未達到足夠低的電洞蕭特基位障。因此本文提出一種金屬性的超材料硫氮化鎢作為傳統金屬與半導體通道之間的緩衝層。其結構的形成可揣摩是由簡單的metal/WS2側接觸做為出發，我將鄰近介面處一定面積的上排硫原子置換為氮。以第一原理及量子傳輸理論計算電子結構與傳輸電流。我發現在金屬與二硫化鎢之間僅需0.6奈米長的硫氮化鎢緩衝層，便可有效降低通道的電洞蕭特基位障：在以鉑為金屬電極的情形中，硫氮化鎢可使蕭特基

型的Pt/WS2側接觸轉變為歐姆特性，達成以單一二維材料實現互補式金屬氧化物半導體的目標。除了鉑電極，即便我採用低功函數的金屬鋁，在Al/WSN/WS2的結構，計算而得的蕭特基位障仍低至0.12 eV。上述鉑與鋁電極的計算結果表明，氮硫化鎢緩衝層顯著提升了選擇電極金屬的靈活性，令選擇不再受限於高功函數的貴重金屬：如金、鉑和鈀。我亦更進一步量化計算Pt/WSN/WS2在不同閘極電壓下的伏安特性，得出該結構有高達10^8的開關電流比和在汲極電壓50毫伏下231 µA/µm的導通電流(接觸電阻 ≈ 63.8Ω∙μm)。同時為驗證實驗製程時硫氮化鎢的穩定性，我們採用第一原理分子動力學在室溫下分別模擬氮

吸附、單顆氮取代硫和單層氮硫化鎢，發覺皆為穩定結構。