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GaSe奈米材料成長及其光電特性研究

為了解決Hot LIMIT y&co remix的問題，作者王劉霞 這樣論述：

Two topics are being the main results for the highlight in this research and those topics were divided into three parts, GaSe nanobelts (NBs) photodetector, metal-oxide-semiconductor field-effect transistor (MOSFET) properties, Ni-doped GaSe heterostructure, and GaSe nanoflakes (NBs) photodetector-

MOSFET properties. In the first work, only Ga and Se elements were involved through a simple chemical vapor deposition (CVD) without any additional chemical compounds to prevent undesired reactions that lead to the contamination of the as-grown GaSe NBs. Two devices of Ni were provided in this thesi

s as evidence of the plasmonic effect involved at 532 nm. The second device was further treated by the rapid thermal annealing (RTA) for diffusing Ni into GaSe causing the formation Ni-doped GaSe heterostructure to prove the plasmonic not occurred after the RTA treatment. As the evidence for proving

plasmonic occurred in Ni metal only, Ti was used as the electrode in GaSe NB as the further fabricated device and for comparing their performance to obtain the optoelectronic properties. The photodetection performance of the individual GaSe NB with Ni confirmed with the plasmonic effect involved al

so the comparison with Ti electrode was measured under illumination at 405 nm, 450 nm, 532 nm, and 650 nm for discovering the visible wavelength region. The figure of merits semiconductor parameters reveals the at 450 nm 3.59x104 A/W, the external quantum efficiency (EQE) about ~106 %, detectivity a

bout ~1012 Jones, and the rise/decay time within 10%-90% calculation about 40 ms/70 ms for Ni contact. Ti contact shows responsivity at 450 nm 1.70x103 A/W, EQE 105 %, detectivity ~1011 Jones, and rise/decay time within 10%-90% calculation about 20 ms/20 ms. The GaSe-NB with Ni and Ti contact were

measured with a field-effect transistor as the p-type semiconducting with mobility in dark-condition at Vd = 1 V was about 8.56 x 10-4 cm2 V-1 s-1, and 1.06 x 10-4 cm2 V-1 s-1. Additionally, the device after annealing treatment exhibits improvement photodetection performance compared to before the a

nnealing treatment. The responsivity at the same wavelength and power intensity before annealing at 450 nm were about 278.13 A/W and after annealing was about 103 A/W. Other optoelectronic properties such as EQE before annealing were about ~104 % to ~106, detectivity ~1010 Jones to 1011 Jones, and t

he rise/fall time before annealing 20 ms/200 ms to 20 ms/20 ms with the calculation 10%-90%. In the case of nanoflakes (NFs) by introducing the SnI2 and the usage of Si substrate were growth as GaSe NFs on the Si substrate. The individual NF has further fabricated metal-semiconductor junction with N

i and Ti contact and measured under illumination at 405 nm, 450 nm, 532 nm, and 650 nm as well as the FETs. At 450 nm the device Ni provides high responsivity as high as 5.78x104 A/W, EQE ~107 %, detectivity ~1012 Jones, and rise/decay time 10%-90% was about 20 ms/40 ms. Meanwhile, Ti 43.28 A/W, EQE

~104 % with detectivity ~1010 Jones and rise/decay time 10%-90% was about 39 ms/39 ms. The field-effect transistor of GaSe NF with Ni or Ti contact shows the p-type semiconducting with mobility in dark-condition at Vd = 1 V was about 4.66x10-3 cm2 V-1 s-1, and 1.79x10-3 cm2 V-1 s-1. Those metal-sem

iconductor junctions in GaSe NB and GaSe NF with the Ni and Ti contact were further measured with the temperature-dependent I-V curves to obtain the energy barrier. The comparison between Schottky Mott’s theory and Richardson based on experiment have been discovered as the confirmation toward the co

nstruction of their energy-band diagram to determine the typical type of contact with Ni or Ti contact. It reveals the applicability and benefits by obtaining the characterization such as energy barrier also offer possibilities to increase their new unexplored properties. The Schottky barrier height

becomes the crucial unexplored fundamental for revealing the operation and behavior of metal-semiconductor interfaces. The GaSe NB-Ni device Schottky barrier based on the experiment was about 0.21±0.02 eV which is close to the theoretical barrier of 0.14 eV. Meanwhile, the barrier height of GaSe NB

-Ti also provides 0.46±0.06 eV (experiment) and 0.49 eV (theoretical). In the case of GaSe NF-Ni provides the barrier height of about 0.59±0.05 eV (experiment) and 0.53 eV (theoretical). In the case of GaSe NF-Ti provides 0.78±0.03 eV (experiment) and 0.88 eV (theoretical). Finally, sufficient thick

ness between GaSe NBs was obtained within 25 min as the evidence to obtain such as the proved high-performance devices as well as in the GaSe NFs. In addition, its comparison about photodetection performance has with other previous reported works and revealing the construction of the energy band dia

gram leads to generalizing a critical role, functional electronic and optoelectronic based on the fundamental state. Thus, it can define the applicability prospect toward photodetector device application and enhance the performance based on 2D-material semiconductors in the future.

以碳氫化合物熱裂解法製備碳包覆奈米高熵合金顆粒

為了解決Hot LIMIT y&co remix的問題，作者曾兆綦 這樣論述：

由於具有獨特的性質和應用科技開發潛力，高熵合金已成為材料界極感興趣的研究目標。高熵合金是由四個以上的主要元素，以等莫爾比方式組成，因此本質上，它們的構型熵大於單一元素組成的合金。不過，在低維度時不僅表面能會增加，且會出現類似原子成簇的傾向，而使製造奈米顆粒變得極為困難。此論文中展示如何以簡單的製程於奈米碳管中合成出高熵合金奈米顆粒。電子顯微鏡和元素分析的結果皆證實被碳層所包覆的奈米顆粒為固溶相，且有些部分被碳化物環繞，組成成分元素為四元至五元的多域結構。多域結構和非磁性中心所產生的硬化現象，會顯著提高室溫下的矯頑磁場。較高的飽和磁場是源於合金化的過程會使電子重新分布到較高的能階。被碳層所包覆

的高熵合金奈米顆粒其構型熵落在與塊材高熵合金相似的範圍中。第一章 介紹奈米碳管和高熵合金的背景，包括碳管的結構、高熵合金的定義以及兩個主題分別的合成方法。第二章 說明本論文使用的實驗設定和儀器介紹。第三章 透過電子顯微鏡和成分分析證明本論文的方法可以製備出的高熵合金奈米顆粒,同時其磁性質和多域的現象也將在此章節中被討論。第四章 總結以上實驗結果。