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為了解決HOT LIMIT的問題，作者Knox, Megan 這樣論述：

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HOT LIMIT進入發燒排行的影片

GaSe奈米材料成長及其光電特性研究

為了解決HOT LIMIT的問題，作者王劉霞 這樣論述：

Two topics are being the main results for the highlight in this research and those topics were divided into three parts, GaSe nanobelts (NBs) photodetector, metal-oxide-semiconductor field-effect transistor (MOSFET) properties, Ni-doped GaSe heterostructure, and GaSe nanoflakes (NBs) photodetector-

MOSFET properties. In the first work, only Ga and Se elements were involved through a simple chemical vapor deposition (CVD) without any additional chemical compounds to prevent undesired reactions that lead to the contamination of the as-grown GaSe NBs. Two devices of Ni were provided in this thesi

s as evidence of the plasmonic effect involved at 532 nm. The second device was further treated by the rapid thermal annealing (RTA) for diffusing Ni into GaSe causing the formation Ni-doped GaSe heterostructure to prove the plasmonic not occurred after the RTA treatment. As the evidence for proving

plasmonic occurred in Ni metal only, Ti was used as the electrode in GaSe NB as the further fabricated device and for comparing their performance to obtain the optoelectronic properties. The photodetection performance of the individual GaSe NB with Ni confirmed with the plasmonic effect involved al

so the comparison with Ti electrode was measured under illumination at 405 nm, 450 nm, 532 nm, and 650 nm for discovering the visible wavelength region. The figure of merits semiconductor parameters reveals the at 450 nm 3.59x104 A/W, the external quantum efficiency (EQE) about ~106 %, detectivity a

bout ~1012 Jones, and the rise/decay time within 10%-90% calculation about 40 ms/70 ms for Ni contact. Ti contact shows responsivity at 450 nm 1.70x103 A/W, EQE 105 %, detectivity ~1011 Jones, and rise/decay time within 10%-90% calculation about 20 ms/20 ms. The GaSe-NB with Ni and Ti contact were

measured with a field-effect transistor as the p-type semiconducting with mobility in dark-condition at Vd = 1 V was about 8.56 x 10-4 cm2 V-1 s-1, and 1.06 x 10-4 cm2 V-1 s-1. Additionally, the device after annealing treatment exhibits improvement photodetection performance compared to before the a

nnealing treatment. The responsivity at the same wavelength and power intensity before annealing at 450 nm were about 278.13 A/W and after annealing was about 103 A/W. Other optoelectronic properties such as EQE before annealing were about ~104 % to ~106, detectivity ~1010 Jones to 1011 Jones, and t

he rise/fall time before annealing 20 ms/200 ms to 20 ms/20 ms with the calculation 10%-90%. In the case of nanoflakes (NFs) by introducing the SnI2 and the usage of Si substrate were growth as GaSe NFs on the Si substrate. The individual NF has further fabricated metal-semiconductor junction with N

i and Ti contact and measured under illumination at 405 nm, 450 nm, 532 nm, and 650 nm as well as the FETs. At 450 nm the device Ni provides high responsivity as high as 5.78x104 A/W, EQE ~107 %, detectivity ~1012 Jones, and rise/decay time 10%-90% was about 20 ms/40 ms. Meanwhile, Ti 43.28 A/W, EQE

~104 % with detectivity ~1010 Jones and rise/decay time 10%-90% was about 39 ms/39 ms. The field-effect transistor of GaSe NF with Ni or Ti contact shows the p-type semiconducting with mobility in dark-condition at Vd = 1 V was about 4.66x10-3 cm2 V-1 s-1, and 1.79x10-3 cm2 V-1 s-1. Those metal-sem

iconductor junctions in GaSe NB and GaSe NF with the Ni and Ti contact were further measured with the temperature-dependent I-V curves to obtain the energy barrier. The comparison between Schottky Mott’s theory and Richardson based on experiment have been discovered as the confirmation toward the co

nstruction of their energy-band diagram to determine the typical type of contact with Ni or Ti contact. It reveals the applicability and benefits by obtaining the characterization such as energy barrier also offer possibilities to increase their new unexplored properties. The Schottky barrier height

becomes the crucial unexplored fundamental for revealing the operation and behavior of metal-semiconductor interfaces. The GaSe NB-Ni device Schottky barrier based on the experiment was about 0.21±0.02 eV which is close to the theoretical barrier of 0.14 eV. Meanwhile, the barrier height of GaSe NB

-Ti also provides 0.46±0.06 eV (experiment) and 0.49 eV (theoretical). In the case of GaSe NF-Ni provides the barrier height of about 0.59±0.05 eV (experiment) and 0.53 eV (theoretical). In the case of GaSe NF-Ti provides 0.78±0.03 eV (experiment) and 0.88 eV (theoretical). Finally, sufficient thick

ness between GaSe NBs was obtained within 25 min as the evidence to obtain such as the proved high-performance devices as well as in the GaSe NFs. In addition, its comparison about photodetection performance has with other previous reported works and revealing the construction of the energy band dia

gram leads to generalizing a critical role, functional electronic and optoelectronic based on the fundamental state. Thus, it can define the applicability prospect toward photodetector device application and enhance the performance based on 2D-material semiconductors in the future.

Advances in Geotechnical Engineering & Geoenvironmental Engineering: Proceedings of the 6th Geochina International Conference on

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為了解決HOT LIMIT的問題，作者 這樣論述：

Dr. Shanzhi Shu serves Senior Geotechnical Engineer supporting resolution of geotechnical challenges on Kiewit projects across North America and has been involved in numerous large-scale infrastructure development projects. He is a registered civil engineer in many states of United States and a regi

stered geotechnical engineer in California. He completed his bachelor’s degree and master’s degree in engineering geology from Hebei Geo University, and Jilin University, respectively, China, and doctoral degree in civil engineering fromWashington State University in US.He has about 30 years of both

academic and industry experiences. He has authored, co-authored and edited about 30 journal and conference proceedings papers, bookand technical reports.Hecurrently also serves as a co-editor of International Journal of Geomechanics (ASCE).Prof Jinfeng Wang is Professor of the Department of Civil E

ngineering, of the College of Civil Engineering and Architecture of Zhejiang University (ORCID ID: 0000-0002-9099-818X). He completed the PhD on Structural Engineering at Zhejiang University. He is member of the American Society of Civil Engineers (ASCE), and the Zhejiang Society for Geotechnical Me

chanics and Engineering (ZJSGME). As the principal investigator, he has beenresponsible for over 10 significant research projects including the National Natural Science Foundation of China.He has authored, co-authored and edited over forty of scientific journal papers, books, book chapters, and conf

erence papers. He is member of the Editorial Board of Journal of Testing and Evaluation (ASTM).Dr. Souliman is an Associate Professor in Civil Engineering at the University of Texas at Tyler. He received his M.S. and Ph.D. from Arizona State University in Civil, Environmental, and Sustainable Engine

ering focusing on Pavement Engineering. His twelve years of experience are concentrated on pavement materials design, Fatigue Endurance Limit of Asphalt Mixtures, Reclaimed Asphalt Pavement (RAP) mixtures, aggregate quality, field performance evaluation, maintenance and rehabilitation techniques, pa

vement management systems, cement treated bases, statistical analyses, modeling, and computer applications in civil engineering. Dr. Souliman has participated in several state and national projects during his current employment at the University of Texas at Tyler including ＂Documenting the Impact of

Aggregate Quality on Hot Mix Asphalt (HMA) Performance, Texas Department of Transportation＂ for TxDOT, ＂Mechanistic and Economic Benefits of Fiber-Reinforced Overlay Asphalt Mixtures＂ for Forta Corporation as well as ＂Simplified Approach for Structural Evaluation of Flexible Pavements at the Networ

k Level＂ which was funded by the US Department of Transportation via Tran-SET University Transportation Center. Dr. Souliman has also participated in several state and national projects during his employment at Arizona State University and University of Nevada, Reno. He had previously worked as a po

stdoctoral scholar at University of Nevada, Reno with the materials and transportation group. He had participated in several national research projects such as the FHWA Project titled ＂Analysis Procedures for Evaluating Superheavy Load Movement on Flexible Pavements＂ as well as Asphalt Research Cons

ortium (ARC) Projects including ＂Design System for HMA Containing a High Percentage of RAP Material＂. Before that, he had worked at Arizona State University where he was the major contributor in the NCHRP 9-44A project entitled ＂Validating an Endurance Limit for HMA Pavements: Laboratory Experiment

and Algorithm Development＂. Dr. Souliman has more than 100 technical publications, conference papers and reports in the field of pavement and aggregate testing, characterization, and field monitoring. He is the recipient of the lifetime International Road Federation Fellowship in 2009. In 2017, his

research work on pavement engineering-related projects earned recognition as his college’s recipient of the Crystal Talon Award, sponsored by the Robert R. Muntz Library, recognizing outstanding scholarship and creativity of faculty from each college as determined by their dean. He also was awarded

with the Crystal Quill award in 2018 by the University of Texas at Tyler for his research efforts and achievements.

以碳氫化合物熱裂解法製備碳包覆奈米高熵合金顆粒

為了解決HOT LIMIT的問題，作者曾兆綦 這樣論述：

由於具有獨特的性質和應用科技開發潛力，高熵合金已成為材料界極感興趣的研究目標。高熵合金是由四個以上的主要元素，以等莫爾比方式組成，因此本質上，它們的構型熵大於單一元素組成的合金。不過，在低維度時不僅表面能會增加，且會出現類似原子成簇的傾向，而使製造奈米顆粒變得極為困難。此論文中展示如何以簡單的製程於奈米碳管中合成出高熵合金奈米顆粒。電子顯微鏡和元素分析的結果皆證實被碳層所包覆的奈米顆粒為固溶相，且有些部分被碳化物環繞，組成成分元素為四元至五元的多域結構。多域結構和非磁性中心所產生的硬化現象，會顯著提高室溫下的矯頑磁場。較高的飽和磁場是源於合金化的過程會使電子重新分布到較高的能階。被碳層所包覆

的高熵合金奈米顆粒其構型熵落在與塊材高熵合金相似的範圍中。第一章 介紹奈米碳管和高熵合金的背景，包括碳管的結構、高熵合金的定義以及兩個主題分別的合成方法。第二章 說明本論文使用的實驗設定和儀器介紹。第三章 透過電子顯微鏡和成分分析證明本論文的方法可以製備出的高熵合金奈米顆粒,同時其磁性質和多域的現象也將在此章節中被討論。第四章 總結以上實驗結果。