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國立陽明交通大學 光電工程研究所 劉柏村所指導 林家伃的 應用超臨界流體處理於銦鎢鋅氧通道之透明可撓電荷捕捉式記憶體特性提升 （2021），提出pi膜製程關鍵因素是什麼，來自於非晶氧化物半導體、薄膜電晶體、氧化銦鎢鋅、超臨界流體製程、可撓曲電子元件、電荷捕捉式快閃記憶體、多層堆疊式高介電係數閘極絕緣層。
而第二篇論文國立臺北科技大學 分子科學與工程系有機高分子碩士班 程耀毅所指導 郭天禹的 使用不同方式製備聚醯亞胺-二氧化矽之複合材料 （2021），提出因為有 聚醯亞胺、耦合劑、sol-gel法、薄膜的重點而找出了 pi膜製程的解答。
應用超臨界流體處理於銦鎢鋅氧通道之透明可撓電荷捕捉式記憶體特性提升
為了解決pi膜製程 的問題，作者林家伃 這樣論述：
Acknowledgement (誌謝) ................................... i摘要 .................................................... iiAbstract ................................................. vTable of contents ..................................... viiiFigure captions ........................................ xiiTab
le caption ......................................... xviiChapter 1 Introduction ................................... 11.1 General Background ................................... 11.2 Thin-film transistor architecture .................... 21.3 Flash Memory ......................................... 31.3
.1 Floating Gate Flash Memory Device................... 41.3.2 Charge Trapping Flash Memory Device ................ 61.4 Transparent Amorphous Oxide Semiconductors (TAOS) .... 71.5 High-k Materials and Bandgap Engineering ............. 91.5.1 High-k Materials ................................... 91.5
.2 Bandgap Engineering ............................... 101.6 Motivations ......................................... 121.7 Organization of the Thesis .......................... 14Chapter 2 Experiment Procedures ......................... 232.1 Experiment Procedures ............................... 232.2
TFTs Device Fabrication ............................. 242.2.1 The DC sputter System ............................. 242.2.2 The RF sputter System ............................. 252.2.3 Plasma-Enhanced Atomic Layer Deposition (PEALD).... 252.2.4 Photolithography Processes ........................ 262.2
.5 Lift-Off Process of Source/Drain Electrodes ....... 272.2.6 Thermal Furnace.................................... 282.2.7 Supercritical Fluid treatment ..................... 282.3 Metal-Insulator-Semiconductor (MIS) Capacitor Fabrication ............................................. 292.4 Device Pa
rameters Determination and Extraction Methods ......................................................... 292.4.1 Basic Electrical Characteristics Measurement ...... 302.4.2 Determination of the Threshold Voltage ............ 302.4.3 Determination of the Subthreshold Swing ........... 312.4.4 Determin
ation of the Field-Effect Mobility ........ 312.4.5 Determination of the on/off Current Ratio ......... 322.5 The Reliability Analysis of the Charge Trapping Flash Memory Device............................................ 332.5.1 Mechanism of the programming and erasing .......... 332.5.2 Retention
test .................................... 352.5.3 Endurance test .................................... 352.6 Material Analysis ................................... 362.6.1 Transmission electron microscopy (TEM) ............ 362.6.2 X-ray photoelectron spectroscopy (XPS) ............ 36Chapter 3 Result
s and Discussion ........................ 463.1 The basic physical and electrical characteristic of a-IWZO charge trapping memory fabricated on silicon substrate ......................................................... 473.1.1 Effect of different oxygen partial ratio during channel deposition .....
................................. 473.1.2 Effect of post annealing after channel deposition . 513.1.3 Summary 1 ......................................... 533.2 The electrical characteristic and reliability analysis of the a-IWZO charge trapping memory devices ............ 543.2.1 Effect of different
thickness of the SiOx tunneling oxide layer ............................................. 553.2.2 Effect of supercritical fluid oxidation treatment . 573.2.3 Effect of the a-IWZO CT-flash memory with and without SiOx tunneling oxide layer .............................. 593.2.4 The electrical analys
is of an a-IWZO charge trapping memory fabricated on flexible PI/glass substrate ........ 603.2.5 Summary 2 ......................................... 613.3 Effects of different LED light illuminated on Transparent a-IWZO CT-Flash Memory Devices .............. 623.3.1 Effect of programming/erasing op
eration after different LED light illuminated ......................... 623.3.2 Summary 3 ......................................... 633.4 The Electrical Characteristics of the a-IWZO CT-Flash Memory Fabricated on Flexible Substrate over multiple bending operation ....................................
... 643.4.1 After bending electrical analysis on polyimide substrates .............................................. 643.4.2 Summary 4 ......................................... 65Chapter 4 Conclusions and Future Work ................... 894.1 Conclusions ......................................... 894
.2 Future work ......................................... 91References .............................................. 93Vita .................................................... 97
使用不同方式製備聚醯亞胺-二氧化矽之複合材料
為了解決pi膜製程 的問題，作者郭天禹 這樣論述：
聚醯亞胺(Polyimide,PI)是一種性質卓越的工程塑膠材料，由於其擁有良好的機械性質、耐化學性、熱穩定性以及介電性質，被廣泛應用於薄膜、纖維、電子、航太與光電等產業。使用傳統的sol-gel法製備PI/SiO2複合材料，PI和SiO2之間的相容性不如預期的好，隨著SiO2含量的增加，PI/SiO2材料的相容性會越來越差。具有耦合劑的PI/SiO2可以改善相容性且使二氧化矽的粒徑變小，但將這種技術實際應用是相對困難的，因為具有耦合劑的複合材料將強烈黏附於用於生產聚醯亞胺膜的基板。在本文中，將使用含有扭曲非共面結構3,3',4,4'-聯苯四羧酸二酐（BPDA）和4,4'-二氨基二苯醚（OD
A）進行聚合，並以不同的sol-gel法將SiO2的顆粒導入聚醯亞胺中，接著以搭配旋轉塗佈和熱亞胺化取得PI/SiO2，並與含有耦合劑(APrTEOS)的PI/SiO2做比較，而後調整製程參數以改善成膜性，探討複合材料其熱性質與相容性的相關研究。