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明志科技大學 電子工程系碩士班 謝滄岩、王志良所指導 趙信豪的 適用於Wi-Fi 6E之小型天線設計 （2019），提出3.5 mm 2C關鍵因素是什麼，來自於Wi-Fi 6E、Sub-6、銅箔貼片、單極天線、玻璃纖維基板、氧化鋁基板。
而第二篇論文國立臺灣師範大學 物理學系 劉祥麟、周方正所指導 黃松勳的 陰離子空缺對於層狀多晶與單晶1T-TiSe2-d的能帶與侷域結構之影響 （2016），提出因為有 Transition metal dichalcogenides (TMDCs)、Charge density waves (CDW)、Excitonic insulator、Semiconductor的重點而找出了 3.5 mm 2C的解答。
適用於Wi-Fi 6E之小型天線設計
為了解決3.5 mm 2C 的問題，作者趙信豪 這樣論述：
本研究設計出兩支涵蓋Wi-Fi 6E雙頻帶天線，其頻帶為2.4-2.5 GHz及5.150-7.125 GHz。兩支天線以類似的設計形式分別在FR-4與Al2O3基板上實現：FR-4基板厚度1.6 mm，相對介電系數ε_r=4.4；Al2O3基板厚度1.3 mm，相對介電系數ε_r=9.8。 第一支天線使用30*30 mm2的FR-4基板設計，首先以一對正方形與微帶線饋入組成單極天線，以其作為較高頻5.15-7.125 GHz頻段之響應，第二步是以延伸接地面的方式作為2.4 GHz附近頻帶之響應，最後以增加銅箔貼片調整阻抗匹配，實現在2.37-2.62 GHz與4.81-7.77 GH
z兩個頻帶的|S11|低於-10 dB。 第二支天線在尺寸20*20 mm2的Al2O3基板設計，第一步調整梯形長邊與短邊配合微帶線饋入組成單極天線，作為較高頻5.15-7.125 GHz頻段之響應，第二步是以延伸接地作為2.4 GHz附近頻帶之響應，最後以增加銅箔貼片調整阻抗匹配，|S11|在2.39-2.58 GHz、3.30-3.46 GHz與4.83-7.21 GHz等三個頻帶皆低於-10 dB。 本論文所提出的兩支天線實測之結果都符合了以下規範：Wi-Fi 6與其擴增頻段Wi-Fi 6E、ISM 2.4-2.5 GHz，以及FCC所規定的UN-II-1, UN-II-2A, UN
-II-2B , UN-II-2C, UN-II-3, UN-II-4, UN-II-5, UN-II-6, UN-II-7, UN-II-8。本論文設計之Wi-Fi 6E雙頻帶天線具有製作簡單、成本低、小尺寸…等優點，未來可被應用在筆記型電腦、行動裝置、智慧穿戴、家用基站以及公用的Wi-Fi無線網路。
陰離子空缺對於層狀多晶與單晶1T-TiSe2-d的能帶與侷域結構之影響
為了解決3.5 mm 2C 的問題，作者黃松勳 這樣論述：
A systematic study of 1T-TiSe2 polycrystalline and single crystalline with controlled Se deficiency level indicates that a significant Se loss could be responsible for the controversial charge density wave (CDW) phase and on whether the nominal 1T-TiSe2 should be categorized as a semiconductor or a
semimetal at room temperature. In the polycrystalline form, the second order CDW phase transition near ~200 K is found to be most pronounced in samples with δ ~0.12, corresponding to about one Se atom missing per eight formula units in average, which is incommensurate to the hexagonal symmetry and
naturally leads to the charge ordering of 2a × 2a × 2c superlattice via exciton-phonon coupling. The anomalous resistivity ρ(T) peak between 100 and 200 K indicates not only resistivity increase due to charge ordering, but also a concomitant p- to n- carrier type change. An interpretation using band
model for an extrinsic p-type semiconductor with an impurity band (IB) in proximity to the valence band (VB) is proposed to explain the evolution of Se vacancy level and electronic structure change for 1T-TiSe2-δ, from the low doping bound (δ ~0.08) of semiconducting behavior to the heavily doped (
δ ~0.17) dirty semiconductor showing metallic-like n-type conduction. Supporting experimental evidences for the Se vacancy existence are provided by the integrated chemical and physical property analyses, including electron probe microanalysis (EPMA), Hall coefficient, and magnetic susceptibility. I
n single crystal form, the Se vacancy and Ti-intercalation are dominant near the crystal surface as explored by the scanning tunneling microscopy (STM). The Se vacancy level is found reduced on the crystal surface after prolonged annealing at high temperature, but the intercalated Ti level grows, wh
ich implies the occurrence of local re-structuring near the Se vacancy sites. Room temperature Raman scattering spectrum shows a red shift of A1g phonon mode and a blue shift of Eg phonon mode after the long time high temperature post-annealing. The high temperature post-annealing procedure has diff
erent impact on polycrystalline and single crystal samples, while samples of small grain size (~10-30 μm) have dominant Se deficiency in equilibrium, samples of large grain size (≳ 1 mm) shows significant amount of Ti-intercalation. This is most likely due to the different level of local re-structur
ing near the Se vacancy sites.Keywords: Transition metal dichalcogenides (TMDCs), Charge density wave (CDW), Excitonic insulator, Semiconductor.